| PART |
Description |
Maker |
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| MHW2821-1 MHW2821-2 |
UHF Silicon FET Power Amplifier
|
Motorola, Inc
|
| NE5511279A-T1A-A NE5511279A-T1-A |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
|
California Eastern Laboratories
|
| 2SK3391 2SK3391JX |
Silicon N-Channel MOS FET UHF Power Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
| 2SK3390 |
Silicon N Channel MOS FET UHF Power Amplifier
|
Hitachi Semiconductor
|
| 2SK3390 |
Silicon N Channel MOS FET UHF Power Amplifier
|
http://
HITACHI[Hitachi Semiconductor]
|
| 2SK3175A |
Silicon N Channel MOS FET UHF Power Amplifier
From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
| MHW2821D |
MHW2821 Technical Data Sheet UHF Silicon FET Power Amplifiers
|
Motorola
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor
Sanyo Semicon Device
|
| MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
