| PART |
Description |
Maker |
| AM29LV200BT70WAE AM29LV200BT70WAC AM29LV200BT70WAI |
EEPROM|FLASH|128KX16/256KX8|CMOS|SOP|44PIN|PLASTIC
16-Kb I2C CMOS Serial EEPROM, SOT-23
16-Kb I2C CMOS Serial EEPROM, SOIC
EEPROM|FLASH|128KX16/256KX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 128KX16/256KX8 |的CMOS | TSSOP封装| 48PIN |塑料
EEPROM|FLASH|128KX16/256KX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 128KX16/256KX8 |的CMOS | BGA封装| 48PIN |塑料
|
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| MX29F200CTTI-90G 29F200C-55 29F200C-70 29F200C-90 |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29F200BMC-70 MX29F200TTC-70 MX29F200TTI-90 MX29F |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
|
MCNIX[Macronix International]
|
| AM29F200B AM29F200BT-120SC |
2 Mbit (256 K x 8-Bit/128 K x 16-Bit)
EEPROM,FLASH,128KX16/256KX8,CMOS,SOP,44PIN,PLASTIC
From old datasheet system
|
AMD Inc
|
| N02L6181A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
|
ON Semiconductor
|
| EDI88257CA EDI88257CA/LPA-C |
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时05555ns
256Kx8 Monolithic SRAM(256Kx8 CMOS单片静态RAM（存取时055555ns
60MHz Rail-to-Rail Input-Output Op Amps; Temperature Range: -40°C to 85°C; Package: 8-MSOP T&R
|
White Electronic Designs Corporation
|
| N02M0818L1 N02M0818L1AN-85I N02M0818L1A N02M0818L1 |
2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| BS62LV2016SI BS62LV2009 BS62LV2009DC BS62LV2009DC- |
Asynchronous 2M(256Kx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 256K X 8 bit 非常低功电压CMOS SRAM56K × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| K6F2008T2E-YF55 K6F2008T2E-YF70 K6F2008T2E K6F2008 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KM68S2000 |
256Kx8 Bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM68FS2000 |
256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| BS616LV2017 BS616LV2017EIP70 BS616LV2017AC BS616LV |
Very Low Power/Voltage CMOS SRAM 128K X 16 bit
Very Low Power/Voltage CMOS SRAM 128K X 16 bit 非常低功电压CMOS SRAM28K的16
FF-SR2 Series, Two-hand Control, 24 Vdc 非常低功电压CMOS SRAM28K的16
LM49370 Audio Sub-System with an Ultra Low EMI, Spread Spectrum, Class D Loudspeaker Amplifier, a Dual-Mode Stereo Headphone Amplifier, and a Dedicated PCM Interface for Bluetooth Transceivers
Marine Lamp, 4 in x 6 in [101,6 mm x 152,4 mm], Wide Flood Beam Pattern, 12 Vdc/50 W/4 A, Flush mounting
Asynchronous 2M(128Kx16) bits Static RAM
|
Brilliance Semiconducto...
Honeywell International, Inc.
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
