PART |
Description |
Maker |
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3 256Mb (32M x 8) PC133 3-3-3 256Mb (32M x 8) PC100 2-2-2 56Mb的(32M的8)PC100-2-2 x16 SDRAM x16内存
|
Toshiba, Corp. SIEMENS AG
|
EM48AM1684VBB-75F EM48AM1684VBB-75FE EM482M1684VBB |
256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM 256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation http://
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU- |
256MB (32Mx64) PC2100 1-bank 512MB (64Mx72) PC2100 2-bank 512MB (64Mx64) PC2100 2-bank 512MB (64Mx72) PC1600 2-bank 256MB (32Mx72) PC1600 1-bank End-of-Life 512MB (64Mx64) PC1600 2-bank 12MB的(64Mx64)PC1600 2银行 256MB (32Mx72) PC2100 1-bank 56MB的(32Mx72)PC2100 1银行
|
Infineon Technologies AG
|
EM42AM1684RTB EM42AM1684RTB-5F EM42AM1684RTB-6F |
256Mb (4M隆驴4Bank隆驴16) Double DATA RATE SDRAM 256Mb (4M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation
|
EM488M3244VBA-8F |
256Mb SDRAM
|
List of Unclassifed Manufacturers http://
|
NT256D64S88ABG |
256MB DIMM
|
Nanya Technology
|
NT256D64S88A0G |
256MB DIMM
|
Nanya Technology
|
NT256D64S8HA0G-6 |
256MB DIMM
|
Nanya Technology
|
HYM72V32M636CLT6-H HYM72V32M636CLT6-K HYM72V32M636 |
SDRAM - SO DIMM 256MB
|
Hynix Semiconductor
|