| PART |
Description |
Maker |
| CS-2917 CS-2907 CS-2907N14 CS-2907N8 CS-2917N8 CS- |
50mA F TO V CONVERTER
|
ZF Electronics Corporation
CHERRY[Cherry Semiconductor Corporation]
|
| AS13011 AS1301A-BTDT AS1301A-BWLT |
5V/50mA Low Noise Inductorless Boost Converter
|
austriamicrosystems AG
ams AG
|
| 2N3292 2N4874 2N3307 2N4252 2N5852 2N4253 2N3293 |
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | TO-72
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 50MA I(C) | TO-72
TRANSISTOR | BJT | NPN | 18V V(BR)CEO | 50MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | TO-72 晶体管|晶体管|叩| 20V的五（巴西）总裁| 50mA的一（c）|72
|
Integrated Device Technology, Inc.
|
| FE5A-1D-0 FE5A-1J-0 FE5A-1G-0 FE5A-1F-0 FE5A-1E-0 |
High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-MSOP; Temperature Range: -40 to 125C; Container: Tape and Reel
High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-DFN; Temperature Range: -40 to 125C; Container: Tape and Reel
|
Power-One
|
| NE32740A NE32708 NE32740B NE32702 NE32700 |
TRANSISTOR | BJT | NPN | 50MA I(C) | MACRO-X
TRANSISTOR | BJT | NPN | 50MA I(C) | MICRO-X
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | CHIP 晶体管|晶体管|叩| 12V的五（巴西）总裁| 50mA的一（c）|芯片
|
Panasonic, Corp.
|
| LTC3642IMS8E-3.3-TRPBF LTC3642IMS8E-3.3E-PBF LTC36 |
High Effi ciency, High Voltage 50mA Synchronous Step-Down Converter
|
Linear Technology
|
| FCP600-48 |
High Efficiency, High Voltage 50mA Synchronous Step-Down Converter; Package: 8-DFN; Temperature Range: -40 to 125C; Container: Tape and Reel
|
Power-One
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
| BD437/D |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA 塑料中功率硅NPN晶体
|
Crydom, Inc.
|
| 2SA1038S 2SA1579 2SA1514K |
ER 3C 3#12 PIN PLUG
High-voltage Amplifier Transistor (−120V/ −50mA)
High-voltage Amplifier Transistor (-120V, -50mA)
High-voltage Amplifier Transistor (−120V −50mA)
High-voltage Amplifier Transistor (−120V, −50mA)
|
Rohm Co., Ltd.
ROHM[Rohm]
|
| HM514260DLJI-7 HM514260DLJI-8 |
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
