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GS816018BT-200V - 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

GS816018BT-200V_620470.PDF Datasheet

 
Part No. GS816018BT-200V GS816018BT-150IV GS816018BT-150V GS816018BT-200IV GS816018BT-250IV GS816018BT-250V GS816018BT-V GS816036BT-250V GS816018BGT-150IV GS816018BGT-150V GS816018BGT-200IV GS816018BGT-200V GS816018BGT-250IV GS816018BGT-250V GS816032BGT-150IV GS816032BGT-150V GS816032BGT-200IV GS816032BGT-200V GS816032BGT-250IV GS816032BGT-250V GS816032BT-150IV GS816032BT-150V GS816032BT-200IV GS816032BT-200V GS816032BT-250IV GS816032BT-250V GS816036BGT-150IV GS816036BGT-150V GS816036BGT-200IV GS816036BGT-200V GS816036BGT-250IV
Description 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

File Size 592.45K  /  23 Page  

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 Full text search : 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs


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CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
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Cypress Semiconductor, Corp.
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CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100
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9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165
9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
Cypress Semiconductor, Corp.
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CY7C1382CV25-167AI CY7C1382CV25-200BZI CY7C1382CV2 512K x 36 pipelined SRAM, 167MHz
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512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
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256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
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IDT[Integrated Device Technology]
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Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
TC554001FTL-85L TC554001FL-10L TC554001FTL-10L 512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器(为512k字8静态RAM)的
Toshiba Corporation
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MOSAIC
http://
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