PART |
Description |
Maker |
1N4001G-1N4007G BY133G |
GLASS PASSIVATED GENERAL PURPOSE RECTIFIERS
|
Shenzhen Taychipst Electronic Co., Ltd
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1.5KE350 1.5KE7.5 1.5KE100 1.5KE400 1N6300 15KE 1. |
160 V, 1500 W, glass passivated junction transient voltage suppressor GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 玻璃钝化结瞬态电压抑制器 16-Bit Dual-Supply Bus Transceiver with Configurable Voltage Translation and 3-State Outputs 48-TSSOP -40 to 85 220 V, 1 mA, glass passivated junction transient voltage suppressor GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
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TRANSYS Electronics Limited Transys Electronics, Ltd. Transys Electronics Ltd. TRSYS http:// List of Unclassifed Manufacturers List of Unclassifed Manufac... List of Unclassifed Man...
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NS8BT NS8DT NSXT NS8AT NS8GT NS8JT NS8KT NS8MT NSB |
Glass Passivated General Purpose Plastic Rectifier 玻璃钝化整流通用塑料 From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
FB1006 FB1010 FB1010L FB1009L FB1000 FB1000L FB100 |
10 Amp. Glass Passivated Bridge Rectifier 10安培。玻璃钝化整流桥 Bridge Rectifiers (Power) 桥式整流器(电力 10 Amp Glass Passivated Bridge Rectifier 10 Amp.Glass Passivated bridge rectifier
|
Fagor Electronics Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC]
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1N4003G-A 1N4003G-B 1N4001G-A 1N4001G-B 1N4002G-B |
1.0A GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 1.0A GLASS PASSIVATED RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41 1.0A GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1.0A GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41 1.0A GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc. Anderson Power Products, Inc. Diodes, Inc.
|
CN646TR CN647TR CN646 CN649 CN647 CN648 CN645 |
GLASS PASSIVATED JUNCTION GENERAL PURPOSE DIODE 0.4 A, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor C... CENTRAL SEMICONDUCTOR CORP
|
S3K-13 S3MB |
Glass Passivated Die Construction 3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
|
Diodes Incorporated
|
1N4001GPP 1N4007GPP 1N4002GPP 1N4003GPP 1N4004GPP |
Leaded Rectifier General Purpose GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1.0 AMP, 50 THRU 1000 VOLTS
|
CENTRAL[Central Semiconductor Corp]
|
GP10M GP10A GP10B GP10D GP10G GP10J GP10K |
1.0 Amp Glass Passivated Junction Rectifiers 50 to 1000 Volts Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 470uF; Voltage: 16V; Case Size: 10x9 mm; Packaging: Bulk Glass Passivated Junction Rectifiers 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Compon... MCC[Micro Commercial Components] Micro Commercial Components Corp. Micro Commercial Components, Corp.
|
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|