| PART |
Description |
Maker |
| 2SK3707 |
High Output MOSFETs
General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| ECH830507 ECH8305 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH3315 |
Medium Output MOSFETs
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| 2SK3831 |
High Output MOSFETs
|
SANYO
|
| 2SK3833 |
High Output MOSFETs
|
SANYO
|
| 2SK2617LS |
High Output MOSFETs
|
SANYO
|
| CPH6316 |
Medium Output MOSFETs
High-Speed Switching Applications
|
Sanyo Semicon Device
|
| CPH6318 |
Medium Output MOSFETs
High-Speed Switching Applications
|
Sanyo Semicon Device
|
| 2SC2230 2SC2230A E000696 |
TRANSISTOR (HIGH VOLTAGE GENERAL AMPLIFIER, COLOR TV CLASS B SOUND OUTPUT APPLICATIONS)
From old datasheet system
HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS COLOR TV CLASS B SOUND OUTPUT APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
