| PART |
Description |
Maker |
| WV3HG2128M64EEU534D6MG WV3HG2128M64EEU-D6 WV3HG212 |
2GB - 2x128Mx64 DDR2 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3EG72256S263AJD3 W3EG72256S-AJD3 |
2GB-256Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
http://
White Electronic Designs Corporation
|
| W3EG2128M72AFSR-D3 |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA
|
White Electronic Design...
|
| EBD21RD4ADNA-7B EBD21RD4ADNA EBD21RD4ADNA-6B EBD21 |
2GB Registered DDR SDRAM DIMM (256M words X72 bits, 2 Ranks) 注册2GB的DDR SDRAM的内存（256M字X72位，2个等级）
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| HYS72D64020GR HYS72D128020GR HYS72D64000GR |
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚G位寄存型 DDR-I SDRAM 模块)
2.5 V 184-pin Registered DDR-I SDRAM Modules(2.5 V 184脚12M位寄存型 DDR-I SDRAM 模块) 2.584针注册的DDR - 1 SDRAM的模块（2.584脚，512M的位寄存型的DDR - SDRAM内存模块余）
|
SIEMENS AG
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48L16031BT-GF0 KM48L16031BT-GFY KM48L16031BT-GFZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns.
DDR SDRAM Specification Version 0.61
128Mb DDR SDRAM
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns.
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MT46V16M16CV-6ITK MT46V64M4 MT46V32M8 MT46V32M8P-5 |
256Mb: x4, x8, x16 DDR SDRAM Features
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| M383L2828BT1 |
DDR SDRAM 184pin DIMM 128Mx72 DDR SDRAM Data Sheet
|
Samsung Electronic
|
