| PART |
Description |
Maker |
| 2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications
STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| FXT458 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR
From old datasheet system
|
ZETEX[Zetex Semiconductors]
|
| MJE13002 MJE13003 |
1.400W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 1.500A Ic, 8 - 40 hFE.
NPN EPITAXIAL SILICON POWER TRANSISTORS
|
Continental Device India Limited
|
| IRF3205 IRF3205PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
|
IRF[International Rectifier]
|
| IRFL4105 IRFL4105TR |
3.7 A, 55 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
IRF[International Rectifier]
|
| HUFA75332S3S HUFA75332G3 HUFA75332P3 HUFA75332S3ST |
66A/ 55V/ 0.016 Ohm. N-Channel UltraFET Power MOSFETs
Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 60A, 0.019 Ohm @ Vgs = 10V, T0263/D2PAK Package
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| IRF5M3205 |
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.015ohm, Id=35A)
THRU-HOLE (TO-254AA) 55V, N-CHANNEL
|
IRF[International Rectifier]
|
| FZT3019 |
NPN Medium Power Transistor
NPN General Purpose Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
| HUFA75329S3S HUFA75329G3 HUFA75329P3 HUFA75329S3ST |
Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 49A, 0.024 Ohms @ VGS = 10V TO-263/D2PAK Package
49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs
49A 55V 0.024 Ohm N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
