| PART |
Description |
Maker |
| AM75DL9608HGT75IT AM75DL9608HG AM75DL9608HGB70IS A |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and
|
SPANSION[SPANSION]
|
| AM29LV128LH103EI AM29LV128LH103FI AM29LV128LH103PC |
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 100ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 110ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 120ns
128 Megabit (8 M x 16-bit/16 M x 8-bit), 3.0 Volt-only uniform sector flash memory, 90ns
|
Advanced Micro Devices
|
| AM49DL32XBGB70IT AM49DL322BGB70 AM49DL322BGT85 AM4 |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit)
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
|
AMD[Advanced Micro Devices]
SPANSION[SPANSION]
|
| EN29F002 EN29F002N EN29F002T-70J EN29F002T-90TI EN |
2 Megabit (256K x 8-bit) Flash Memory
2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V -10% for both read/write operation. With RESET function.
|
Eon Silicon Solution
N.A.
ETC[ETC]
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| EN71NS128B0-7DCWP EN71NS128B011 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
| AM29LV160DB-70WCE AM29LV160DT-70WCE AM29LV160DB-70 |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO44
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 16Mb(2M×81Mx16, 3V, CMOS引导扇区闪存
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| S29CD016G0MFFA202 S29CD016G0MFAA212 S29CD016G0JFAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位）6兆位12k × 32的位），2.5伏，只有突发模式，双启动，同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 32兆位米32位）6兆位512k × 32的位），2.5伏，只有突发模式，双启动，同步读/写闪存与VersatileI内存/输出
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O 512K X 32 FLASH 2.7V PROM, 67 ns, PBGA80
|
Spansion Inc.
Spansion, Inc.
|
| AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29 |
4 Megabit (524288 x 8-Bit/262144 x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
| AM45DL6408G |
64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) (Preliminary)
From old datasheet system
|
AMD Inc
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
