| PART |
Description |
Maker |
| NSS30070MR6T1G |
30 V, 0.7 A, Low VCE(sat) PNP Transistor(30V, 0.7A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
| 2SA1385-Z |
Low VCE(sat):VCE(sat)=-0.18 V TYP.Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|
| 2SB1115A |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| 2SD1615A |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
| CPH3101-TL-E |
Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single CPH3
|
ON Semiconductor
|
| 30C02MH-TL-E |
Bipolar Transistor 30V, 0.7A, Low VCE(sat) NPN Single MCPH3
|
ON Semiconductor
|
| NSS20600CF8T1G NSS20600CF8 |
20V 6A LOW VCE(sat) PNP High Current Transistor ChipFET™
20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ON Semiconductor
|
| HSD2118J |
LOW VCE(sat) TRANSISTOR (20V, 5A) 低Vce（sat）晶体管0V的，5A）条
|
HI-SINCERITY MICROELECTRONICS, CORP.
HSMC
Hi-Sincerity Mocroelectronics
|
| TSD882S |
Low Vce(sat) NPN Transistor 低Vce（sat）NPN晶体
|
Taiwan Semiconductor Co., Ltd.
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
