PART |
Description |
Maker |
V436532S04VATG |
3.3 VOLT 32M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
V437432S24V |
3.3 VOLT 32M x 72 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM ECC MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
V827332K04S |
2.5 VOLT 32M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
V436532S04VATG-10PC |
ER 10C 10#16 PIN RECP 3.3 VOLT 32M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic, Corp. MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp Mosel Vitelic Corp
|
IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2,银行注册内存模块(32M × 72配置2组寄存同步动态内存模块)
|
International Business Machines, Corp.
|
W29GL032C |
32M-BIT 3.0-VOLT PARALLEL FLASH MEMORY
|
Winbond
|
KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
KMM372F3200BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块)
|
International Business Machines, Corp.
|
R01AN1504EJ0100 |
Using the DTC to Perform Continuous Clock
|
Renesas Electronics Corporation
|
S70WS512N00BAWA20 S70WS512N00BAWAA3 S70WS512N00BFW |
Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION[SPANSION]
|
TC58NS256ADC |
256-MBIT (32M x 8 BITS) CMOS NAND E PROM (32M BYTE SmartMedia)
|
TOSHIBA
|