| PART |
Description |
Maker |
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| W3DG6417V7D2 W3DG6417V10D2 W3DG6417V75D2 W3DG6417V |
128MB - 16Mx64, SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG6418V7D2I-XX W3DG6418V7D2XX W3DG6418V75D2I-XX |
128MB - 16Mx64, SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| WED3EG6418S335D4 WED3EG6418S202D4 WED3EG6418S262D4 |
128MB- 16Mx64 DDR SDRAM UNBUFFERED W/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYS64D64020GU-7-B HYS64D64320GU-5-B HYS64D64320GU- |
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 512MB (32Mx72) PC2100 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
184-Pin Unbuffered Dual-In-Line Memory Modules
DDR SDRAM Modules - 256MB (32Mx64) PC2100 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 2-bank
|
Infineon
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB25D128160CE-6 HYB25D128400CE-6 HYB25D128800CE-6 |
DDR SDRAM Components - 128Mb (8Mx16) DDR333 (2.5-3-3); Available 2Q04
DDR SDRAM Components - 128Mb (32Mx4) DDR333 (2.5-3-3); Available 2Q04
DDR SDRAM Components - 128Mb (16Mx8) DDR333 (2.5-3-3); Available 2Q04
128 Mbit Double Data Rate SDRAM
|
Infineon
|
| M366S1623ET0 |
16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD 16Mx64 SDRAM的内存在8Mx8BanksK的刷新，3.3社民党基于同步DRAM
|
Samsung Semiconductor Co., Ltd.
|
| HYMD216646AL6-K HYMD216646AL6-H HYMD216646A6-H HYM |
Unbuffered DDR SDRAM DIMM
16Mx64|2.5V|M/K/H/L|x4|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| HY5V26CL/SF-HI HY5V26CL/SF-KI HY5V26CL/SF-SI HY5V2 |
SDRAM - 128Mb
|
Hynix Semiconductor
|
