| PART |
Description |
Maker |
| APT29F100B2 APT29F100L |
1000V, 29A, 0.46Ω Max, trr ?70ns N-Channel FREDFET
|
Microsemi Corporation
|
| FDB2572 FDP2572 FDB2572NL |
N-Channel PowerTrench MOSFET 150V, 29A, 54mз 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
150V N-Channel UltraFET Trench MOSFET 29A, 0.056 Ohms @ VGS = 10V, TO-263/D2PAK Package 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
N-Channel PowerTrench MOSFET 150V, 29A, 54m蟹
N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 1SS303 |
Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX.
|
TY Semiconductor Co., Ltd
|
| AOT29S50 AOTF29S50 AOB29S50 |
500V 29A a MOS Power Transistor
|
Alpha & Omega Semiconductors
|
| AOT29S50 |
500V 29A a MOS TM Power Transistor
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| M1FP3 |
Schottky Rectifiers (SBD) (30V 1.29A)
|
Shindengen Electric Mfg.Co....
Shindengen Electric Mfg.Co.Ltd
|
| FDP257212 |
N-Channel PowerTrench? MOSFET 150V, 29A, 54mΩ
|
Fairchild Semiconductor
|
| FDB2572 FDP2572 |
N-Channel UltraFET Trench MOSFET 150V, 29A, 54mOhm
|
Fairchild Semiconductor
|
| NTE5906 NTE6005 NTE5980 NTE5907 NTE5995 NTE5986 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1600V. Average forward current 40A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 40A.
Receptacle With A Wire Wrap Tail
Silicon Power Rectifier Diode / 40 Amp
Silicon Power Rectifier Diode 40 Amp
NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp
40 A, 300 V, SILICON, RECTIFIER DIODE
40 A, 200 V, SILICON, RECTIFIER DIODE
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| 04F6326 04F8828 04F8908 04F8804 |
WIDERSTAND DRAHT EMAILL 2R0 1000V 300W
WIDERSTAND DRAHT EMAILL 3R1 1000V 300W
WIDERSTAND DRAHT EMAILL 8R0 1000V 300W WIDERSTAND线材EMAILL 8R0 1000V 300W
WIDERSTAND DRAHT EMAILL 10R0 1000V 300W
|
Electronic Theatre Controls, Inc.
|
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
