| PART |
Description |
Maker |
| LC33864P-80 LC33864PM-10 LC33864PM-70 LC33864PM-80 |
512K PSEUDO SRAM
512K (65536 words X 8 bits) Pseudo-SRAM
DRAGONBALL MX1 12k5536字8位）伪SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| IC66LV10016AL IC66LV10016AL-70B |
16M-BIT (1M-WORD BY 16-BIT) Low Power Pseudo SRAM
ASYNCHRONOUS STATIC RAM, Pseudo SRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| HY64SD16162B-DF85E |
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM 1M X 16 PSEUDO STATIC RAM, 85 ns, PBGA48
|
Hynix Semiconductor, Inc.
|
| EM566169BC-60 EM566169BC-65 EM566169BC-85 EM566169 |
1M x 16 Pseudo SRAM
|
ETRON[Etron Technology, Inc.]
|
| TY00680002/003ADGB |
Pseudo SRAM and NOR Flash Memory Mixed Multi-Chip Package
|
TOSHIBA
|
| HY64UD16162M-DF70I |
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
|
HYNIX SEMICONDUCTOR INC
|
| M72DW64000B90ZT M72DW64000B M72DW64000B70ZT M72DW6 |
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| CYU01M16SCEU-70BVXI CYU01M16SCE CYU01M16SCEU-70BVX |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
|
Cypress Semiconductor, Corp.
|
| W964B6BBN80I W964B6BBN W964B6BBN70 W964B6BBN70E W9 |
Low Power Mobile Products
1M WORD X 16BIT LOW POWER PSEUDO SRAM
|
Winbond Electronics
WINBOND[Winbond]
|
| AD7441BRMZ AD7441BRTZ-R2 AD7441BRTZ-REEL7 EVAL-AD7 |
Pseudo Differential Input, 1 MSPS, 10-/12-Bit ADCs in an 8-Lead SOT-23
Pseudo Differential Input, 1 MSPS, 10-Bit ADC in an 8-Lead SOT-23; Package: MSOP; No of Pins: 8; Temperature Range: Industrial
|
Analog Devices
ANALOG DEVICES INC
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
