| PART |
Description |
Maker |
| MC68HC705BD3 MC68HC05BD5 M68HC705UGANG M68HC705UPG |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MC68HC05 MC68HC05B16 MC68HC05B32 MC68HC05B4 MC68HC |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
Motorola, Inc
|
| MC68HC705SR3 68HC705SR3 |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcontroller Units
|
MOTOROLA[Motorola, Inc]
|
| MC68HC705BXX 68HC05B |
High-density Complementary Metal Oxide Semiconductor (HCMOS) Microcomputer Unit
|
Motorola Inc
|
| MC68HC11KW1 |
High-density complementary metal oxide semiconductor HCMOS) microcontroller unit
|
Freescale Semiconductor
|
| MC68HC705L2B MC68HC705L2CB MC68HC705L2K MC68HC05L2 |
High-density complementary metal oxide semiconductor (HCMOS) microcontroller unit
|
Motorola, Inc
|
| M68EM11KW1 MC68HC11KW1 |
MC68HC11KW1 Technical Data
High-density complementary metal oxide semiconductor HCMOS) microcontroller unit
|
Motorola, Inc
|
| ISPLSI2064VL-100LB100 ISPLSI2064VL-100LJ44 ISPLSI2 |
2.5V In-System Programmable SuperFAST?High Density PLD
2.5V In-System Programmable SuperFAST?/a> High Density PLD
2.5V In-System Programmable SuperFAST⑩ High Density PLD
2.5V In-System Programmable SuperFAST High Density PLD
Turns Counting Dial; Number of Turns:10; Knob/Dial Style:Round Skirted With Indicator Line; Body Material:Aluminum; Shaft Size:1/4; Color:Satin RoHS Compliant: Yes EE PLD, 10 ns, PQFP100
2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP100
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD
|
LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| BFC236821105 BFC236829564 6811334 BFC236859562 |
CAP,MET POLYESTER (MYLAR),1UF,100VDC,10% -TOL,10% TOL
CAP,MET POLYESTER (MYLAR),560NF,100VDC,5% -TOL,5% TOL
CAP,MET POLYESTER (MYLAR),330NF,63VDC,10% -TOL,10% TOL
CAP,MET POLYESTER (MYLAR),5.6NF,400VDC,5% -TOL,5% TOL
|
Vishay BCcomponents
|
| ISPLSI2128E-100LT176 ISPLSI2128E-135LT176 ISPLSI21 |
In-SystemProgrammableSuperFASTHighDensityPLD
In-System Programmable SuperFASTHigh Density PLD EE PLD, 7.5 ns, PQFP176
In-System Programmable SuperFAST High Density PLD
In-System Programmable SuperFAST⑩ High Density PLD
In-System Programmable SuperFAST?/a> High Density PLD
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| SCPHN20 SCPHN26 SCPHN10 SCPHN16 SCPHN30 SCPHN6 |
High Voltage,High Current,High Density Standard Recovery Rectifier(????靛?16000V锛?俯搴?5???骞冲??存??垫?5.5A,楂??锛?ぇ?垫?,楂??搴??????㈠??存???
5.5 A, 16000 V, SILICON, RECTIFIER DIODE
High Voltage,High Current,High Density Standard Recovery Rectifier(反向电压6000V，温5℃时平均整流电流5.5A,高压，大电流,高密度，标准恢复整流
STANDARD RECOVERY HIGH VOLTAGE, HIGH CURRENT RECTIFIER
|
Semtech Corporation
|
| ISPLSI5512VA-100LB272 ISPLSI5512VA-70LQ208 5512VA |
70 MHz in-system prommable 3.3V superWIDE high density PLD
In-System Programmable 3.3V SuperWIDE⑩ High Density PLD
In-System Programmable 3.3V SuperWIDE High Density PLD
110 MHz in-system prommable 3.3V superWIDE high density PLD
|
LATTICE[Lattice Semiconductor]
|
