PART |
Description |
Maker |
DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
CPD63 |
Chip Form: HIGH SPEED SWITCHING DIODE Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor
|
1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
IMN10 |
Switching Diode Ultra high speed switching High reliability.
|
Rohm
|
CPD83V |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
BAS16-02W BAS1602W Q62702-A1239 |
From old datasheet system Silicon Switching Diode Preliminary data (For high-speed switching applications)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
GBAV151 |
The GBAV151 is designed for ultra high speed switching application SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD GTM CORPORATION
|
BAW100 Q62702-A376 |
From old datasheet system Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)
|
Siemens Group Infineon SIEMENS[Siemens Semiconductor Group]
|
CMDD4448 |
SUPERminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|