PART |
Description |
Maker |
S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1) Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
KGF1322S |
Power FET (Ceramic Package Type) From old datasheet system
|
OKI
|
AIDM9 AIDM17J AIDM150 AIDM125 AIDM13G AIDM175 AIDM |
2-Channel Differential Input 24-Bit No Latency Delta Sigma ADC; Package: SSOP; No of Pins: 16; Temperature Range: 0°C to 70°C .): 1Mbit/s; Current Transfer Ratio: 10% (min) (19% (min) for rank O) @I_F(IN)=16mA; Isolation voltage BVs @1minute (min) (V_rms): 5000; Safety Standard 24-Bit µPower No Latency Delta-Sigma ADC in SO-8; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C IF Wave Detection ICs; Application: Cordless Telephone; Operating Voltage: 1.8-5.5V; Package: SSOP16 (0.65); Comments: Mixer/ IF Amp/ Noise Detection ) Typ.: 4.5; Package Type: 2-11D1B ) Typ.: 2.5; Package Type: 2-11D1B IC Output Photocouplers and Photorelays; Features: Buffer logic type(totem pole output); Package: MFSOP6; Surface Mount Type: Y; Number of Pins: 5 IC Output Photocouplers and Photorelays; Features: Inverter logic type(totem pole output); Package: SDIP6; Surface Mount Type: Y; Number of Pins: 6 Serial 12-Bit, 3.5Msps Sampling ADCs with Shutdown; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: Y; Package: PW-MINI; Number Of Pins: 3; Publication Class: High Frequency Switching Power Transistor MOSFETs - Nch VDSS=30V; Surface Mount Type: N; Package: PW-MOLD; R DS On (Ω): (max 0.12) (max 0.1); I_S (A): (max 5) C-Band Power GaAs IMFETs; Frequency Band (GHz): 3.4-3.8; P1dB (dBm): 42.5; G1dB (dB): 12.5; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B 逻辑IC C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.0-5.3; P1dB (dBm): 42.5; G1dB (dB): 8.5; Ids (A) Typ.: 4.4; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.5; Package Type: 2-16G1B 逻辑IC Logic IC 逻辑IC C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.3-5.9; P1dB (dBm): 45.5; G1dB (dB): 8.5; Ids (A) Typ.: 8; IM3 (dBc) Typ.: -45; Rth (°C/W) Typ.: 1.2; Package Type: 2-16G1B 逻辑IC C-Band Power GaAs IMFETs; Frequency Band (GHz): 5.9-6.4; P1dB (dBm): 38.5; G1dB (dB): 10; Ids (A) Typ.: 1.6; IM3 (dBc) Typ.: -47; Rth (°C/W) Typ.: 3.8; Package Type: 2-11D1B 逻辑IC MOSFETs - Nch VDSS=30V; Surface Mount Type: N/Y; Package: TO-220FL/SM; R DS On (Ω): (max 0.02); I_S (A): (max 45)
|
Glenair, Inc. Square D by Schneider Electric
|
STU6N65K3 STF6N65K3 STFI6N65K3 |
N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in I2PAKFP package N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
|
STMicroelectronics ST Microelectronics
|
STD6N65M2 STB6N65M2 |
Zener-protected N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in D2PAK package N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in DPAK package
|
STMicroelectronics ST Microelectronics
|
CAT28C64BHP-20 CAT28C64BHN-15 CAT28C64BHT-20 CAT28 |
PROFET - Smart High Side Switches XWAY ADM6993 RF Switches; Package: PG-TSLP-7; P-0.1dB(min): 21.0 dBm; Switching Time(max): 4.0 µs; Isolation @1GHz: 32.0 dB; Insertion Loss @1GHz: 0.4 dB; Pmax: 21.0 dBm HITFET, TEMPFET - Smart Low-Side Switches IGBT Modules up to 1200V SixPACK; Package: AG-EASY2B-1; IC (max): 50.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EasyPACK 2B; IGBT Modules up to 6500V Single; Package: A-IHV130-3; IC (max): 400.0 A; VCE(sat) (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm; Single: N-Channel 600V MOSFETs; Package: PG-TO262-3; Technology: CoolMOS; VDS (max): 600.0 V; RDS (on) (max) (@10V): 105.0 mOhm; ID (max): 31.0 A; RthJC (max): 0.5 K/W; XWAY ADM5120P Medium Power IF max = 500mA; Package: PG-SOT363-6; Configuration: Single; VR (max): 30.0 V; IF (max): 2,000.0 mA; CT (max): 60.0 pF; VF (max): 600.0 mV; X-GOLD213 - PMB8810 UMTS LNA; Package: PG-TSLP-16; Frequency Hz: 800 MHz 1900 MHz 2100 MHz; Gain (typ): 15.2 dB 16.5 dB 16.5 dB; F (typ): 1.2 dB 1.0 dB 1.1 dB; P-1dB (in): -12 -10 -11; I (typ): 3.5 mA 3.4 mA 3.5 mA; SPOC - SPI Power Controller for Advanced Light Control; Package: PG-DSO-36; Channels: 5.0; LED mode: No; Cranking mode: No; Watchdog: No; Over Voltage Protection: 41.0 V IGBT Modules up to 1200V SixPACK; Package: AG-ECONO2-1; IC (max): 75.0 A; VCE(sat) (typ): 1.85 V; Configuration: SixPACK; Technology: IGBT4; Housing: EconoPACK 2; 128Kx8 EEPROM 128Kx8 EEPROM ADM3120BX x8的EEPROM IGBT Modules up to 6500V Single; Package: A-IHV130-3; I<sub>C </sub>(max): 400.0 A; V<sub>CE(sat)</sub> (typ): 4.3 V; Configuration: Single; Technology: IGBT2 Standard; Housing: IHV 130 mm;
|
Honeywell International, Inc. NXP Semiconductors N.V. Infineon Technologies AG Amphenol, Corp. Vectron International, Inc. Advanced Analogic Technologies, Inc.
|
1SS300 |
Small package Small total capacitance :CT = 2.2 pF(Typ)Fast reverse recovery time :trr=1.6 ns(Typ)
|
TY Semiconductor Co., Ltd
|
STF7N80K5 STFI7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
SLD-2083CZ |
12 Watt Discrete LDMOS FET in Ceramic Package
|
sirenza.com SIRENZA[SIRENZA MICRODEVICES]
|
SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC
|