| PART |
Description |
Maker |
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
| IRS23364DJTRPBF |
High voltage, high speed power MOSFET and IGBT driver for 3-phase applications
|
International Rectifier
|
| STFV4N150_07 FV4N150 STFV4N150 STFV4N15007 |
N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH?/a> Power MOSFET
N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH Power MOSFET
N-channel 1500V - 5ヘ - 4A - TO-220FH Very high voltage PowerMESH⑩ Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| IXTT1N450HV |
High Voltage Power MOSFET
|
IXYS Corporation
|
| IXTF03N400 |
High Voltage Power MOSFET
|
IXYS Corporation
|
| GFCG20 |
N Channel High voltage, Power MOSFET
|
Gunter Seniconductor GmbH.
|
| IXFH6N120 |
High Voltage HiPerFET Power MOSFET
|
IXYS Corporation
|
| IXTK20N150 IXTX20N150 |
High Voltage Power MOSFET Extended FBSOA
|
IXYS Corporation
|
| APT8030B2VFR_05 APT8030B2VFR APT8030B2VFR05 APT803 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
MICROSEMI POWER PRODUCTS GROUP
|
