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CM600HN-5F - Integrated Gate Bipolar Transistor (IGBT) Modules: 250V HIGH POWER SWITCHING USE INSULATED TYPE

CM600HN-5F_1227018.PDF Datasheet

Part No.

CM600HN-5F

Description

File Size

65.59K / 4 Page

Maker

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: CM600HN-5F

Maker: MITSUBIS..

Pack: 模块

Stock: Reserved

Unit price for :

50: $149.17

100: $141.71

1000: $134.25

Email: oulindz@gmail.com

Homepage

http://www.mitsubishichips.com/

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Full text search : Integrated Gate Bipolar Transistor (IGBT) Modules: 250V HIGH POWER SWITCHING USE INSULATED TYPE

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Related keyword From Full Text Search System

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