| PART |
Description |
Maker |
| M5LV-512/256-10SAI M5LV-512/256-12SAC M5LV-256/160 |
EE PLD, 10 ns, PBGA352 BGA-352
EE PLD, 12 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
EE PLD, 15 ns, PBGA352 BGA-352
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP144
EE PLD, 15 ns, PQFP160 PLASTIC, QFP-160
CONNECTOR ACCESSORY EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP100
EE PLD, 15 ns, PQFP100 TQFP-100
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
EE PLD, 12 ns, PQFP100 TQFP-100
EE PLD, 12 ns, PBGA256 BGA-256
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| M5LV-320_192-10AI M5LV-512_104-6AC M5-192_74-15YC |
IND SHLD 3.3UH 9A RMS SMT
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
10-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 12 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Commercial EE PLD, 15 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 15 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP240
CONNECTOR ACCESSORY EE PLD, 10 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 20 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
CONNECTOR ACCESSORY EE PLD, 12 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP240
Fifth Generation MACH Architecture
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| APT100GF60JRD |
The Fast IGBTis a new generation of high voltage power IGBTs. ⑩的快速IGBT是一种高压IGBT的新一代
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Fast IGBT & FRED 600V 140A
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| APT12GT60KR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 25A
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| SI3233-X-GM SI3233-X-FM SI3201-X-FS SI3201-X-GS SI |
PROSLICPROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, QCC38
PROSLIC? PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION
|
Silicon Laboratories, Inc.
Silicon Laboratories Inc.
|
| APT60GT60JR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 90A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
| APT5014BLL APT5014SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS 7 500V 35A 0.140 Ohm
|
Advanced Power Technology, Ltd.
|
|
