PART |
Description |
Maker |
FU-319SPA-C6 |
InGaAs APD PREAMP MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷APD的前置放大器模块,用.31微米.55微米波长范围
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
FRM5N141GT |
InGaAs-APD/Preamp Receiver
|
Eudyna Devices Inc
|
NR8360JP-BC |
InGaAs APD for OTDR applications. With FC-UPC connector. 30 um InGaAs APD IN DIP PACKAGE FOR OTDR APPLICATION
|
NEC CEL[California Eastern Labs]
|
AT10XGC-J57 AT10XGC-J AT10XGC |
High Sensitivity 10Gb/s surface mount coplanar APD preamp receiver
|
Bookham, Inc.
|
C30659-900-R8A C30659 C30659-1060-3A C30659-1060-R |
Silicon and InGaAs APD Preamplifier Modules
|
PerkinElmer Optoelectro... PERKINELMER[PerkinElmer Optoelectronics]
|
FRM3Z621LT FRM3Z621KT |
InGaAs-PIN/Preamp Receiver
|
List of Unclassifed Manufacturers ETC[ETC]
|
G10342-54 G10342-14 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
G12072-54-15 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
G10518-51 G10518-54 |
InGaAs PIN photodiode with preamp
|
Hamamatsu Corporation
|
NR4510UR |
InGaAs APD ROSA with internal preamplifier for 2.5 Gb/s applications.
|
NEC
|
NR4510US NR4510US-AZ NR4510UT NR4510UT-AZ |
InGaAs APD RECEIVER FOR 2.5 Gb/s ROSA WITH INTERNAL PRE-AMPLIFIER
|
California Eastern Labs
|