| PART |
Description |
Maker |
| FJN4307R FJN4307RBU |
PNP Epitaxial Silicon Transistor
Audio Transformer; Insertion Loss:46.8dB; Size:9.79 x 8.89 x 9.52 mm; Terminal Type:PCB Surface Mount 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| HN1B04FU HN1B04FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SA1356 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATION
|
TOSHIBA
|
| 2SA1203 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications
|
TOSHIBA
|
| HN1A01FU07 HN1A01FU |
Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| HN1A01FE |
Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1312 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|
| 2SA1359 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) LOW SPEED SWITCHING AUDIO FREQUENCY POWER AMPLIFIER
|
TOSHIBA
|
| 2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications
|
TOSHIBA
|
| 2SA1357 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
