PART |
Description |
Maker |
MGW20N120-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP21N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MMG05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
F2202S |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.6A I(D) FET, Enhancement, ID 1.6 A PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER
|
Polyfet RF Devices List of Unclassifed Manufacturers
|
SV401 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOSTRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LP701 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
SR703 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
L2721 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
SP204 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
Polyfet RF Devices
|