PART |
Description |
Maker |
MDD142 MDD142-18N1 MDD142-08N1 MDD142-12N1 MDD142- |
Thyristor and Rectifiers Modules HIgh Power Diode Modules 165 A, 800 V, SILICON, RECTIFIER DIODE HIgh Power Diode Modules 165 A, 1800 V, SILICON, RECTIFIER DIODE HIgh Power Diode Modules 165 A, 1400 V, SILICON, RECTIFIER DIODE
|
IXYS[IXYS Corporation] IXYS, Corp.
|
RM500HA-H RM500HA-2H RM500HA-M |
DIODE MODULES HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
MA8334-004 MA8334 MA8334-001 |
RF High Average Power Multi-Throw PIN Diode Switch Modules
|
MACOM[Tyco Electronics]
|
RM30CZ-24 RM30DZ-24 RM30CZ-2H RM30DZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM30TC-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM15TC-40 |
MITSUBISHI DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
VBO22-08NO8 VBO22-14NO8 VBO22-16NO8 VBO22-18NO8 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
VBO21-12NO7 VBO21-08NO7 VBO21-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS Corporation
|
NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
MDD26-18N1B MDD26 MDD26-08N1B MDD26-12N1B MDD26-14 |
Diode Modules Thyristor and Rectifiers Modules Diode Modules 36 A, 1400 V, SILICON, RECTIFIER DIODE, TO-240AA
|
IXYS[IXYS Corporation] IXYS, Corp.
|
RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|