PART |
Description |
Maker |
SBF50P10-023L |
RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL
|
SENSITRON[Sensitron]
|
SBF50P10-023L |
RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL
|
Sensitron Semiconductor
|
SHDCG225701 SHD225701 |
LOW RDS HERMETIC POWER MOSFET - N-CHANNEL 90 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Sensitron Semiconductor SENSITRON[Sensitron]
|
IRFR9120NPBF IRFU9120NPBF IRFR9120NTR IRFR9120NTRL |
6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA 6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48Ω , ID = -6.6A ) HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48ヘ , ID = -6.6A ) ULTRA LOW ON RESISTANCE
|
International Rectifier
|
IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A) Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rdson)\u003d 0.018ohm,身份证\u003d 37A条) Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A) 60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A) -200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
IRFR2905ZPBF IRFU2905ZPBF |
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A ) HEXFET垄莽 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m楼? , ID = 42A ) HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mヘ , ID = 42A )
|
International Rectifier
|
SHDC224701 |
LOW R HERMETIC POWER MOSFET
|
Sensitron
|
IRFI1010N IRFI1010 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A) Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A) HEXFET? Power MOSFET Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)
|
IRF[International Rectifier]
|
GFC014 |
N Channel Power MOSFET with low RDS(on)
|
Gunter Seniconductor GmbH.
|
IRFU320 IRFR320 IRFR320PBF IRFR320TR IRFR320TRL IR |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Power MOSFET(Vdss=400V Rds(on)=1.8ohm Id=3.1A) Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A) 400V Single N-Channel HEXFET Power MOSFET in a D-Pak package
|
IRF[International Rectifier]
|
IRFD9120 |
-100V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-1.0A) Power MOSFET(Vdss=-100V Rds(on)=0.60ohm Id=-1.0A) HEXFET? Power MOSFET Power MOSFET(Vdss=-100V/ Rds(on)=0.60ohm/ Id=-1.0A)
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IRF[International Rectifier]
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