| PART |
Description |
Maker |
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W986432AH W986432AHA1 |
512K x 4 BANKS x 32 BITS SDRAM
512K x 4 BANKS x 32 BITS SDRAM
From old datasheet system
|
Winbond Electronics
WINBOND[Winbond]
|
| W9816G6BB-7 W9816G6BB |
BGA SDRAM
512K X 2 BANKS X 16 BITS SDRAM
From old datasheet system
|
Winbond Electronics
|
| 50S116T |
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE[Ceramate Technical]
|
| W9816G6CB W9816G6CB-6 W9816G6CB-7 |
512K 】 2 BANKS 】 16 BITS SDRAM
|
Winbond
|
| W9864G2IB |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
| W9864G2GH-5 W9864G2GH-7 |
512K X 4 BANKS X 32BITS SDRAM
|
Winbond Electronics Corp
http://
|
| IC42S16102 IC42S16102-5BG IC42S16102-5BIG IC42S161 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
DYNAMIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| K4S643233F-SE K4S643233F-DE K4S643233F-SE_P75 K4S6 |
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
