| PART |
Description |
Maker |
| BAR63V-04W-GS18 BAR63V-04W-GS08 |
RF PIN Diodes - Dual, Series in SOT-323 射频PIN二极双，系列采用SOT - 323
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| NTS4409NT1G |
Small Signal MOSFET 25 V, .75 A, Single N-Channel, ESD Protection, SC-70/SOT-323; Package: SC-70 (SOT-323) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 700 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
| HSMS-280ASERIES HSMS-282ASERIES HSMS-281ASERIES |
Surface Mount RF Schottky Diodes in SOT-323 (SC-70) (87K in pdf) 表面贴装射频肖特基二极管的SOT - 323（的SC - 70）（2000-08-19 PDF格式
|
DB Lectro, Inc.
Bourns, Inc.
|
| BAR64V-04W BAR64V-04W-GS08 BAR64V-04W-GS18 |
RF PIN Diodes - Dual, Series in SOT-323
|
Vishay Siliconix
|
| BAR64V-05W-V BAR64V-05W-V10 |
RF PIN Diodes - Dual, Common Cathode in SOT-323
|
Vishay Siliconix
|
| EMH2604 |
Power MOSFET, 20V, 4A, 45mOhm, -20V, -3A, 85mOhm, Complementary Dual EMH8
|
ON Semiconductor
|
| DF1-PD2428SCFB DF1B-10S-2.5R DF1B-11S-2.5R DF1B-12 |
MOSFET N-CH 600V 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 24A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 44A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 80A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
2.5mm Pitch Connector for Discrete Wire Connection (Product Compliant with UL/CSA Standard) 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
CAT6 SOL PC PVC BLU 50FT PVC SOLID PATCH CORD
MOSFET N-CH 500V 48A SOT-227B
MOSFET N-CH 200V 180A SOT-227B
MOSFET N-CH 300V 130A SOT-227B
MOSFET N-CH 500V 64A SOT-227
MOSFET N-CH 70V 200A SOT-227B
|
http://
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| BSS138DW09 BSS138DW-7-F |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
MOSFET DUAL N-CHAN 50V SOT363 200 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes Incorporated
Diodes, Inc.
|
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
|
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
|
| IRF7106 IRF7106TR |
20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)
|
IRF[International Rectifier]
|
