PART |
Description |
Maker |
AS6WA5128 |
3.0V to 3.6V 512K × 8 Intelliwatt low-power CMOS SRAM(3.0V 3.6V 512K × 8 Intelliwatt 低功CMOS 静态RAM) 3.0V to 3.6V 512K 】 8 Intelliwatt low-power CMOS SRAM 3.0V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
IS62WV5128ALL IS62WV5128BLL |
(IS62WV5128A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM (IS62WV51218A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
GLT6400L08SL-85ST GLT6400L08LL-85ST GLT6400L08SLI- |
Ultra Low Power 512k x 8 CMOS SRAM 超低功率12k × 8 CMOS SRAM
|
Electronic Theatre Controls, Inc.
|
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
AS6C4008 |
512K X 8 BIT LOW POWER CMOS SRAM
|
Alliance Semiconductor Corporation
|
LY6251216 LY6251216E LY6251216GL LY6251216GV LY625 |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
BS616LV8016DIP55 BS616LV8016FCP55 BS616LV8016FC70 |
Very Low Power CMOS SRAM 512K X 16 bit
|
Brilliance Semiconductor
|
LY62L51316LL-55I LY62L51316LL-55IT LY62L51316LL-55 |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
LY625128 |
512K X 8-Bit Low Power CMOS SRAM
|
Lyontek
|
LY6251316LL-55LLT LY6251316LL-70LLT LY6251316GL-55 |
512K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
HY62SF16804A-I HY62SF16804A-C HY62SF16804A-SM10I |
512K X 16 STANDARD SRAM, 100 ns, PBGA48 High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
|
HYNIX SEMICONDUCTOR INC
|