PART |
Description |
Maker |
AF002C1-39 |
GaAs IC Control FET Series DC-2.5 GHz
|
Skyworks Solutions
|
R2J25953SP R2J25953SP-00-Q2 |
H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET
|
Renesas Electronics Corporation
|
FS30KM-03 |
Motor control, Lamp control, Solenoid control DC-DC converter, etc.
|
Mitsubishi Electric Semiconductor
|
MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc] Motorola, Inc.
|
25RIA160 25RIA80S90 25RIA 25RIA10 25RIA100 25RIA10 |
800V 25A Phase Control SCR in a TO-208AA (TO-48) package 1400V 40A Phase Control SCR in a TO-208AA (TO-48) package 1200V 25A Phase Control SCR in a TO-208AA (TO-48) package 1000V 25A Phase Control SCR in a TO-208AA (TO-48) package 100V 25A Phase Control SCR in a TO-208AA (TO-48) package 600V 25A Phase Control SCR in a TO-208AA (TO-48) package 400V 25A Phase Control SCR in a TO-208AA (TO-48) package 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRFH7911PBF IRFH7911PBF-15 |
Control and synchronous FET in one package
|
International Rectifier
|
MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
MTB3N60E_D ON2423 MTB3N60E MTB3N60E-D ON2422 |
From old datasheet system TMOS POWER FET 3.0 AMPERES 600 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|