| PART |
Description |
Maker |
| NAND04G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位，4千兆位，8千兆112 Byte/1056字的页面.8V/3V，NAND闪存
|
STMicroelectronics N.V.
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| NAND08GW3C2BZL1E NAND16GW3C2BZL1E NAND08GW3C2BZL1F |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| V23814-K1306-M130 M130 V23814-K1306-MXXX V23815-K1 |
1.25 Gbit/s Rx Receiver
1.25 Gbit/s Tx Transmitter
From old datasheet system
Parallel Optical Link: PAROLI Tx AC
|
Infineon
|
| V23826-K305-C363 V23826-K305-C353 V23826-K305-C373 |
Multimode 850 nm 1.0625 Gbit/s Fibre Channel 1.3 Gigabit Ethernet 1x9 Transceiver 多模850纳米1.0625 Gbit / s的光纤通道1.3千兆以太网收发器1x9
|
Infineon Technologies AG
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| V23849-R35-C55 V23849-R36-C55 |
Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; common ground sheme
Transceivers by Form-factor MSA - iSFP? 1.25 Gbit/s GBE; 4.25/2.125/1.0625 Gbit/s FC, 850 nm; MM; LC; separated ground sheme
|
Infineon
|
| HDMP-3268 |
HDMP-3268 · 3.2 GBit/sec 68 x 68 Digital Crosspoint Switch
3.2 Gbit/sec 68x68 Crosspoint Switch
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| 72SD3232B 72SD3232BRPFE 72SD3232BRPFH 72SD3232BRPF |
1 Gbit SDRAM
|
Maxwell Technologies
|
| FOA1121A1 FOA1122A1 |
1.25 Gbit/s Transimpedance Amplifier
|
Infineon
|
