| PART |
Description |
Maker |
| 2SK439 2SK439E K439 |
Silicon N Channel MOS FET
Silicon N-Channel MOS FET 硅N沟道场效应晶体管
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK
2SK439
|
Hitachi,Ltd.
Sanyo Semicon Device
Hitachi Semiconductor
|
| 2SJ540 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ555 |
0.036 ohm, POWER, FET
Silicon P-Channel MOS FET
|
Hitachi Semiconductor
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| 2SK3782 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM N沟道硅片结型场效应晶体管的阻抗流脑转
N-channel Silicon J-FET
|
NEC, Corp.
NEC[NEC]
|
| 2SK3718 |
N-channel Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|
| 2SK3783 |
N-channel Silicon J-FET
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
|
NEC[NEC]
|
| MTB8N50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| 2SK808A 2SK808 |
Silicon N-channel Power F-MOS FET
Silicon N Channel Power FMOS FET
|
Panasonic Semiconductor
|
| MTM86627 |
Silicon P-channel MOS FET (FET)
|
Panasonic
|
