| PART |
Description |
Maker |
| UPA502T PA502T G11238EJ1V0DS00 UPA502T-T1 UPA502T- |
100 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL MOS FET 5-PIN 2 CIRCUITS
Silicon transistor
|
NEC Corp.
NEC[NEC]
|
| SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| 2SJ278MYTR-E 2SJ278 2SJ278MYTL-E |
1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
| UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
From old datasheet system
MOS Field Effect Transistor
P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC]
NEC Corp.
|
| CPH3303 |
1600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
P-Channel MOS Silicon FET Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SJ296 2SJ296S 2SJ296L |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB
Silicon P-Channel MOS FET(P沟道MOSFET) 硅P沟道场效应晶体管性（P沟道MOSFET的）
|
Hitachi,Ltd.
|
| RQJ0202VGDQA RQJ0202VGDQATL-E |
2700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET LEAD FREE, SC-59A, MPAK-3
Silicon P Channel MOS FET Power Switching
|
Vectron International, Inc.
Renesas Electronics Corporation
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SJ130 2SJ130L 2SJ130S |
Power switching MOSFET
Silicon P-Channel MOS FET
|
HITACHI[Hitachi Semiconductor]
|
| 2SK1254 2SK1254L 2SK1254S |
Power switching MOSFET
Silicon N-Channel MOS FET
|
HITACHI[Hitachi Semiconductor]
|
