| PART |
Description |
Maker |
| NE3508M04-A NE3508M04-T2 NE3508M04-T2-A NE3508M04 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效TRANSISITOR
HETERO JUNCTION FIELD EFFECT TRANSISITOR 异质结型场效应TRANSISITOR
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| NE3512S02 NE3512S02-T1C-A NE3512S02-T1D-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR 异质结型场效应晶体管
|
California Eastern Laboratories, Inc.
|
| 2SK2552C |
JUNCTION FIELD EFFECT TRANSISTOR
|
NEC Corp.
|
| MMT3823 |
JUNCTION FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| NJ1800DL |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ14AL |
Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| NJ42 |
Silicon Junction Field-Effect Transistor
|
INTERFET[InterFET Corporation]
|
| 2N5460 2N5461 |
P-Channel Silicon Junction Field-Effect Transistor
|
InterFET Corporation
|
| J111 J112 J113 |
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS
|
Micro Electronics
|
| 2N5457 2N5458 |
SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| SMP5398 SMP5397 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
| SMPJ212 |
N-Channel silicon junction field-effect transistor
|
InterFET Corporation
|
