| PART |
Description |
Maker |
| NESG3031M14-T3-A NESG3031M14 NESG3031M14-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| NESG2031M05-T1-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| NESG2101M16-T3-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| NESG2030M04-T2-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR npn型硅锗高频晶体管
|
Duracell
|
| BFP650 BFP65010 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
| NESG210719-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain
|
Renesas Electronics Corporation
|
| NESG2021M05-A NESG2021M05-T1 NESG2021M05-T1-A |
NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
|
Renesas Electronics Corporation
|
| 2SC4159 2SA1606 A1606 |
2SA1606
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF 100W Driver Applications
PNP/NPN Epitaxial Planar Silicon Transistors
NPN Epitaxial Planar Silicon Transistors for High-Voltage SwitchingAF 100W Driver Application(用于高电压转换，AF 100W驱动器应用的NPN硅外延平面型晶体
|
Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
|
| NESG210719-T1-A NESG210719-A |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
|
California Eastern Labs
|
| MAX2320 MAX2321 MAX2322 MAX2324 MAX2325 MAX2326 MA |
Adjustable.High-Linearity.SiGe.Dual-Band.LNA/Mixer ICs
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs 可调、高线性度、SiGe、双频段、LNA/混频器IC
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs RF/MICROWAVE DOWN CONVERTER
Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| 2SC5414 0640 |
NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications
NPN Epitaxial Planar Silicon Transistors
From old datasheet system
|
SANYO[Sanyo Semicon Device]
|
| 2SC5761 2SC5761-T2 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
|
NEC[NEC]
|
