PART |
Description |
Maker |
GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE 1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM 3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL Microsemi Corporation
|
BB145_2 BB145 BB145T/R BB145115 |
6.9 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode From old datasheet system
|
NXP Semiconductors Philipss
|
BB304A Q62702-B118 SIEMENSAG-BB304A |
From old datasheet system Silicon Variable Capacitance Diode (For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes) 42 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG Siemens Group
|
HVU200A |
29.75 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE Variable Capacitance Diode for Electronic Tuning(?ㄤ??佃?璋??????靛?浜??绠?
|
Hitachi,Ltd.
|
BB143 BB143115 |
5.3 pF, SILICON, VARIABLE CAPACITANCE DIODE Low-voltage variable capacitance diode
|
NXP SEMICONDUCTORS PHILIPS[Philips Semiconductors]
|
IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE) Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6 Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
HVL355CM |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVC362TRF-E HVC317BTRF HVU200ATRU HVC358BTRF-E |
15 V, SILICON, VARIABLE CAPACITANCE DIODE 30 V, SILICON, VARIABLE CAPACITANCE DIODE VHF BAND, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
|
|
BB639C Q62702-B695 |
Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners) VHF BAND, 39 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Johanson Dielectrics, Inc. SIEMENS AG Infineon Siemens Group SIEMENS[Siemens Semiconductor Group]
|
1T362 |
Silicon Variable Capacitance Diode Designed For Electronic Tuning Of TV Tuner(硅可变电容二极管(用于电视调谐器的电子调谐)) 硅变容二极管设计电子调谐电视调谐器(硅可变电容二极管(用于电视调谐器的电子调谐) Silicon Variable Capacitance Diode
|
Sony, Corp. Sony Corporation
|
1N5448A 1N5465A 1N5467B JAN1N5469B 1N5445C 1N5446C |
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 20 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 18 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 33 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7 100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
|