| PART |
Description |
Maker |
| EP2S EP2S-3G1 EP2S-3G1TT EP2S-3G2 EP2S-3G2T EP2S-3 |
AUTOMOTIVE RELAYS LOW SOUND PRESSURE
AC 12C 6#16 6#12 SKT RECP LINE
MAX5128 Evaluation Kit/Evaluation System
ER 2C 2#16 PIN RECP LINE
Connectors, Accessories
Replaced by PTN04050C :
MS3126F14-5SWF0
MARK. TAG STRIPS 9705A/8/10 B 11- 20
MY BOOK PRO 500GB EXT HD USB 2.0/FW400/800 3.5 1YR
General Purpose Sensor
Replaced by PT6101 :
LOW SOUND PRESSURE 低的声音压力
Replaced by PTH12020W,PTH08T220W : 低的声音压力
ER 26C 26#16 SKT RECP WALL 低的声音压力
CABLE ASSEMBLY; 7/16" MALE TO N MALE; 52 OHM, RG8A/U COAX 低的声音压力
CABLE ASSEMBLY; 7/16" MALE TO N MALE; 52 OHM, RG8A/U COAX; 12" CABLE LENGTH 低的声音压力
E Core 低的声音压力
RECEPTACLE, INLINE 5 WAY 低的声音压力
Replaced by PTH03020W,PTH04T220W : 低的声音压力
ER 4C 4#16S PIN RECP LINE ER 4C 46S 线性插
Replaced by PTN78000W : 低的声音压力
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| KMM366F1600BK3 KMM366F1680BK3 |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IBM13M16734BCD |
16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
| TC58NS128ADC |
128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia )
|
TOSHIBA
|
| M366S1723CTS |
16M x 64 SDRAM DIMM based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| KMM372C1600BK |
16M x 72 DRAM DIMM(16M x 72 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM53216004BV |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| FU-632SEA-3M43A FU-632SEA-3M25A FU-632SEA-6M25A FU |
Replaced by PTH03020W,PTV03020W : 20 Amp 3.3V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85
Replaced by PTH03020W :
Replaced by PTH05020W,PTV05020W : 20 Amp 5V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85
1.55 um EAM/DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL(WDM) 1.55微米EAM /半导体激光器与单模光纤尾纤（波分复用模块
Replaced by PTH05020W,PTV05020W : 20 Amp 5V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85 1.55微米EAM /半导体激光器与单模光纤尾纤（波分复用模块
Replaced by PTH03020W,PTV03020W : 20 Amp 3.3V-Input Next Generation 'Big Hammer' Programmable ISR 27-SIP MODULE -40 to 85
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| MC-4516DA727PFA-A75 MC-4516DA727 MC-4516DA727EFA-A |
16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
|
NEC, Corp.
NEC Corp.
|
| MC-4516CD641XS-A10 MC-4516CD641XS-A80 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SOCKET TYPE, SODIMM-144
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory, Inc.
|
| MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT
CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
