| PART |
Description |
Maker |
| W25P40-VSNI W25P40-VSNIG W25P40 W25P20 W25P10-VSNI |
4 Mbit Uniform Sector, Serial Flash Memory 2M X 1 FLASH 2.7V PROM, PDSO8
4M X 1 FLASH 2.7V PROM, PDSO8 0.150 INCH, GREEN, PLASTIC, SOIC-8
1M-BIT, 2M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 40MHZ SPI
|
Winbond Electronics, Corp.
|
| CAT1026LI-45-GT3 CAT1026LI-45T3 CAT25C04LI-1.8TE13 |
Dual Voltage Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM
1K/2K/4K SPI Serial CMOS EEPROM
16K-Bit CMOS PARALLEL EEPROM
64K-Bit CMOS PARALLEL EEPROM
512K-Bit CMOS Flash Memory
32K/64K-Bit SPI Serial CMOS EEPROM
1 Megabit CMOS Flash Memory
512K-Bit CMOS PARALLEL EEPROM
1 Megabit CMOS Boot Block Flash Memory
256K-Bit CMOS PARALLEL EEPROM
Supervisory Circuits with I2C Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer
Precision, Adjustable Shunt Regulator
Supervisory Circuits with I2C Serial Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer
128K/256K-Bit SPI Serial CMOS EEPROM
16K-Bit Serial EEPROM, Cascadable
|
CATALYST[Catalyst Semiconductor]
|
| 5962-0153201QYX 5962D0153201QYX 5962L0153201QYA 59 |
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose none.
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Technology
|
| MAX11100 EL2423J/883B MAX148BCAP-T MAX148BCAPT MAX |
16-Bit, 5V, 200ksps ADC with 10μA Shutdown
Quad De-Compensated High Speed Operational Amplifier 四德补偿的高速运算放大器
2.7V to 5.25V Low-Power 8-Channel Serial 10-Bit ADCs 8-CH 10-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO20
3V, 8-Bit ADC with 1µA Power Down 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDSO20
3.5- and 4.5-Digit, Single-Chip ADCs with LCD Drivers 1-CH DELTA-SIGMA ADC, PDSO28
CMOS, 1.3µs, 8-Bit ADC with Voltage Reference and Track/Hold 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDIP20
|
Maxim Integrated Products, Inc.
|
| W25X40A W25X40AVZPIG W25X20A |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| W25X80VZPIZ W25X10 W25X10_07 W25X10VDAC W25X10VDAC |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
WINBOND[Winbond]
|
| PIC16F62XT-20E_SS PIC16LF62X-20_P PIC16F62X-20_SO |
FLASH-Based 8-Bit CMOS Microcontroller
Code Hopping Encoder(KeeLoq 码编码器)
RESISTOR,ARRAY,2.2K, 5%
RES ARRAY 100 OHM 4TERM 2RES SMD
BBG ECL GATE OR/NOR TRPL; Package: SOEIAJ-16; No of Pins: 16; Container: Tape and Reel; Qty per Container: 2000
Triple 2-3-2-Input OR/NOR Gate; Package: SOEIAJ-16; No of Pins: 16; Container: Tape and Reel; Qty per Container: 2000
Enhanced FLASH/EEPROM 8-Bit Microcontroller(驱动/吸收电流高，工作电压2.0~5.5V，微控制
Enhanced FLASH 8-Bit CMOS Microcontroller with A/D Converter and EEPROM Data Memory(带ADC转换器和EEPROM数据存储器的闪速CMOS微控制器)
Enhanced FLASH/EEPROM 8-Bit Microcontroller With A/D Module(驱动/吸收电流高，工作电压3.0~5.5V，微控制
Enhanced FLASH/EEPROM 8-Bit Microcontroller With A/D Module(驱动/吸收电流高，工作电压2.5~5.5V，微控制
8-Pin, 8-Bit CMOS Enhanced FLASH Microcontroller with A/D Converter and EEPROM Data Memory(-2.5~5.5V,具ADC,闪速微控制
OTP 8-Bit CMOS Microcontroller with EEPROM Data Memory(工作电压2.5~5.5V路比较器，微控制
2K 5.0V IIC serial EEPROMs(2.5V~5.5V,2K1M次擦写周ISO7816标准)
1K 5.0V IIC serial EEPROMs(2.5V~5.5V,1K1M次擦写周ISO7816标准)
256K 5.0V SPI Bus Serial EEPROM(4.5~5.5V,256K浣?SPI?荤嚎涓茶?EEPROM)
|
Microchip Technology Inc.
|
| NX25P10 NX25P20 NX25P40 |
1M BIT 2M BIT AND 4M BIT SERIAL FLASH MEMORY WITH 10MHZ SPI
|
List of Unclassifed Manufacturers
|
| SST25VF512-20 SST25VF512-20-4C-SA SST25VF512-20-4C |
IC,SERIAL EEPROM,NOR FLASH,64KX8,CMOS,SOP,8PIN,PLASTIC
512 Kbit SPI Serial Flash
|
Silicon Storage Technology, Inc
|
| ATTINY24V-10MUR ATTINY24V-10SSUR ATTINY84V-10PU AT |
8-BIT, FLASH, 10 MHz, RISC MICROCONTROLLER, QCC20 4 X 4 MM, 0.80 MM HEIGHT, 0.50 MM PITCH, GREEN, MO-220WGGD-5, MLF-20
8-BIT, FLASH, 10 MHz, RISC MICROCONTROLLER, PDSO14 0.150 INCH, GREEN, PLASTIC, MS-012AB, SOIC-14
8-bit Microcontroller with 2/4/8K Bytes In-System Programmable Flash 8-BIT, FLASH, 10 MHz, RISC MICROCONTROLLER, PDIP14
16-BIT, FLASH, 32 MHz, RISC MICROCONTROLLER, PQFP64
8-BIT, FLASH, 40 MHz, MICROCONTROLLER, PQFP44
|
Atmel, Corp.
ATMEL CORP
|
| W25X10A09 W25X80AVSSIG W25X20AVZPIG W25X40AVSSIG W |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
|
