| PART |
Description |
Maker |
| SCH2602 |
350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| VP0540 VP0535 VP0535N3 |
200 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
P-Channel Enhancement-Mode Vertical DMOS FETs
|
SUPERTEX INC
Supertex, Inc
|
| DN3135N8-G |
N-Channel Depletion-Mode Vertical DMOS FETs 135 mA, 350 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
|
Supertex, Inc.
|
| NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 |
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
|
ON Semiconductor
|
| RA03M3540MD RA03M3540MD10 RA03M3540MD-101 |
RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO
350 MHz - 400 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
Mitsubishi Electric Semiconductor
|
| IRFU321 |
3.1 A, 350 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
HARRIS SEMICONDUCTOR
|
| SCVP0535N2 |
200 mA, 350 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
SUPERTEX INC
|
| IRF713 IRF711 MTP2N35 IRF712 IRF710 IRF710-713 MTP |
N-Channel Power MOSFETs/ 2.25A/ 350-400V
N-Channel Power MOSFETs 2.25A 350-400V
N-Channel Power MOSFETs, 2.25A, 350-400V
|
FAIRCHILD[Fairchild Semiconductor]
|
| NGD8205NT4G NGD8205AN NGD8205ANT4G NGD8205N12 |
Ignition IGBT 20 Amp, 350 Volt, N.Channel DPAK
|
ON Semiconductor
|
| MGP15N35CL-D |
Ignition IGBT 15 Amps, 350 Volts N-Channel TO-220 and D2PAK
|
ON Semiconductor
|
| MJ10000 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS 20 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
|
| FSL23A0R FSL23A0D FN4476 FSL23A0R4 FSL23A0D1 FSL23 |
6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
6A/ 200V/ 0.350 Ohm/ Radiation Hardened/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
|
