| PART |
Description |
Maker |
| UPA808 UPA808T UPA808T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
|
NEC[NEC]
|
| UPA809 UPA809T UPA809T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD 微波低噪声放大器NPN硅外延晶体管，内个元素迷你模
|
NEC, Corp.
NEC[NEC]
|
| KV1931A KV1911A KV1981A |
Tuning Varactors
UHF-MICROWAVE SUPER HYPERABRUPT JUNCTION VARACTOR DIODES
|
Microsemi Corporation
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CK-L09505M521 CK-L09505D521 CK-L09623M511 CK-R2273 |
9250 MHz - 9750 MHz RF/MICROWAVE ISOLATOR
8400 MHz - 10700 MHz RF/MICROWAVE ISOLATOR
21200 MHz - 24200 MHz RF/MICROWAVE ISOLATOR
3400 MHz - 3500 MHz RF/MICROWAVE ISOLATOR
3600 MHz - 4200 MHz RF/MICROWAVE ISOLATOR
5800 MHz - 7200 MHz RF/MICROWAVE ISOLATOR
4300 MHz - 5100 MHz RF/MICROWAVE ISOLATOR
17300 MHz - 19700 MHz RF/MICROWAVE ISOLATOR
|
FDK CORP
|
| BBY52-03W BBY5203W Q62702-B664 |
Utilibox, Plastic Boxes, Style A, ABS Plastic, box is 4.60 inch height x 4.60 inch width x 2.37 inch depth, Black Textured Finish
Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BB112 Q62702-B240 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| CU41K2B1P-902.5-1T CU41K2A1P-902.5-1T CU41K2B1P-14 |
890 MHz - 915 MHz RF/MICROWAVE ISOLATOR
1429 MHz - 1453 MHz RF/MICROWAVE ISOLATOR
100 MHz - 200 MHz RF/MICROWAVE 3 PORT CIRCULATOR
872 MHz - 905 MHz RF/MICROWAVE ISOLATOR
940 MHz - 960 MHz RF/MICROWAVE ISOLATOR
|
Samtec, Inc.
|
| BB512 Q62702-B479 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8 V)
From old datasheet system
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8 V) 470 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BBY58-02L BBY58-02V BBY58-05W BBY58-06W BBY58-07L4 |
Silicon Tuning Diodes 硅调谐二极管
SHOWCASE CABINET 硅调谐二极管
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
|
INFINEON[Infineon Technologies AG]
|
| HPQ-09W HPQ-06 HPQ-10 HPQ-10W HPQ-04 HPQ-07 HPQ-08 |
POWER SPLITTERS/COMBINERS 690 MHz - 830 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 510 MHz - 570 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 900 MHz - 970 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 880 MHz - 1030 MHz RF/MICROWAVE COMBINER, 0.5 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 730 MHz - 800 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 315 MHz - 395 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 580 MHz - 690 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 680 MHz - 790 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 480 MHz - 600 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 380 MHz - 490 MHz RF/MICROWAVE COMBINER, 0.4 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 410 MHz - 455 MHz RF/MICROWAVE COMBINER, 0.35 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 1700 MHz - 2400 MHz RF/MICROWAVE SPLITTER AND COMBINER, 0.71 dB INSERTION LOSS
POWER SPLITTERS/COMBINERS 990 MHz - 1100 MHz RF/MICROWAVE COMBINER, 0.45 dB INSERTION LOSS
|
Mini-Circuits
|
