| PART |
Description |
Maker |
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| UT51C164 UT51C164JC-35 UT51C164MC-60 UT51C164JC-40 |
256K X 16 BIT EDO DRAM
|
UTRON Technology
ETC[ETC]
|
| HYB514175BJ-60 HYB514175BJ-55 HYB514175BJ-50 Q6710 |
256k x 16 Bit EDO DRAM 5 V 50 ns
256k x 16 Bit EDO DRAM 5 V 60 ns
256k x 16 Bit EDO DRAM 5 V 55 ns
256k x 16-Bit EDO-DRAM
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IS41LV16256B-35KL IS41LV16256B-60T |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 60 ns, PDSO40
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 35 ns, PDSO40
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
|
| AS4LC256K16EO |
3.3V 256K×16 CMOS DRAM (EDO)(3.3V 256K×16 CMOS动态RAM（扩展数据总线
|
Alliance Semiconductor Corporation
|
| HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 |
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
16M x 72-Bit EDO-DRAM Module (ECC - Module)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| HYM322005GS-60 HYM322005GS-50 HYM322005S-60 HYM322 |
2M x 32-Bit Dynamic RAM Module
2M x 32 Bit EDO DRAM Module
2M x 32 Bit DRAM Module
2M x 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version)
From old datasheet system
2M x 32-Bit Dynamic RAM Module 2M X 32 EDO DRAM MODULE, 50 ns, SMA72
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AS4LC256K16E0-45JC AS4LC256K16E0-35JC AS4LC256K16E |
3.3V 256K X 16 CMOS DRAM (EDO)
|
ALSC[Alliance Semiconductor Corporation]
|
| UPD4217805G5-60-7JD UPD4217805G5-50-7JD UPD4217805 |
x8 EDO Page Mode DRAM
16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO 16位动态随机存储器2m-word8位，江户
|
NEC TOKIN America Inc.
NEC TOKIN, Corp.
|
| HYM368035GS-60 HYM368035S-60 Q67100-Q3018 HM368035 |
8M x 36 Bit EDO DRAM Module with Parity
From old datasheet system
8M x 36-Bit EDO-DRAM Module
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
