PART |
Description |
Maker |
KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2 SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronics
|
HYB39S256400D HYB39S256400DTL-6 HYB39S256400DTL-7 |
256 MBit Synchronous DRAM SDRAM Components - 256Mb (16Mx16) FBGA PC133 2-2-2 SDRAM Components - 256Mb (32Mx8) PC133 2-2-2 SDRAM Components - 256Mb (32Mx8) FBGA PC133 2-2-2 SDRAM Components - 256Mb (16Mx16) PC133 2-2-2 SDRAM Components - 256Mb (64Mx4) FBGA PC133 2-2-2 256-MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
EM484M1684VTC-7FE EM484M1684VTC-8FE EM484M1684VTC- |
256Mb (4MBank6) Synchronous DRAM 256Mb (4M??Bank??6) Synchronous DRAM
|
Electronic Theatre Controls, Inc.
|
EM48AM1684VBB-75F EM48AM1684VBB-75FE EM482M1684VBB |
256Mb (4M隆驴4Bank隆驴16) Synchronous DRAM 256Mb (4M×4Bank×16) Synchronous DRAM
|
Eorex Corporation http://
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
EM42AM1684RTB EM42AM1684RTB-5F EM42AM1684RTB-6F |
256Mb (4M隆驴4Bank隆驴16) Double DATA RATE SDRAM 256Mb (4M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation
|
HY5V58BLF-H HY5V58BLF-S |
SDRAM - 256Mb
|
Hynix Semiconductor
|
W942508BH |
256Mb DDR
|
Winbond
|
HYS72D256220GBR-7-B HYS72D128300HBR-5-B HYS72D1283 |
256MB - 2GB, 184pin
|
Infineon
|