| PART |
Description |
Maker |
| GP800DDM12 |
Hi-Reliability Dual Switch IGBT Module Advance Information 800 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| DIM800DDM12-A000-15 |
Dual Switch IGBT Module
|
Dynex Semiconductor
|
| DIM400DDM17-A00009 |
Dual Switch IGBT Module
|
Dynex Semiconductor
|
| DIM600DDS12-A000-15 |
Dual Switch IGBT Module
|
Dynex Semiconductor
|
| DIM800DDM17-A00009 |
Dual Switch IGBT Module
|
Dynex Semiconductor
|
| GP801DDM18 |
Hi-Reliability Dual Switch Low VCESAT IGBT Module
|
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| GP800NSM33 |
Hi-Reliability Single Switch IGBT Module Preliminary Information 800 A, 3300 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| GP801DCM18 |
B Series/ Female Solder 800 A, 1800 V, N-CHANNEL IGBT
Hi-Reliability Chopper Switch Low VCESAT IGBT Module
|
Dynex Semiconductor, Ltd.
DYNEX[Dynex Semiconductor]
|
| APTGF360U60D4 |
Single Switch - IGBT
Single switch NPT IGBT Power Module
|
ADPOW[Advanced Power Technology]
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
