| PART |
Description |
Maker |
| 2SK3019 2SK3019TL |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Transistors > MOS FET > Small Signal MOS FET
|
ROHM
|
| TL061CN TL061A TL061AC TL061ACN TL061AI TL061AIN T |
LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 2SK3030 2SK3023 2SK3030TENTATIVE |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Silicon N-Channel Power F-MOS FET
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| 2SK360E 2SK360 |
Silicon N Channel MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Hitachi Semiconductor
|
| 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORAT |
Silicon N-Channel Power F-MOS FET 5000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| AD822 AD822AR AD822AN AD822BR-REEL |
Single-Supply, Rail-to-Rail Low Power FET-Input Op Amp
|
Analog Devices
http://
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| 2SK2414 2SK2414-Z 2SK2414-Z-T1 2SK2414-Z-E1 2SK241 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
Low withstand voltage Nch MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MC33171DR2 MC33174VDR2 MC33172VD MC33172DR2G MC331 |
Single Supply 3.0 V to 44 V, Low Power Operational Amplifiers(???婧??浣?????绠??澶у?)
Single Supply 3V to 44V, Low Power Dual Op Amp
Single Supply 3V to 44V, Low Power Quad Op Amp
Single Supply 3V to 44V, Low Power Single Op Amp
|
ON Semiconductor
|
| AD82403 AD824ARZ-14 |
Single Supply, Rail-to-Rail Low Power, FET-Input Op Amp QUAD OP-AMP, 4000 uV OFFSET-MAX, 2 MHz BAND WIDTH, PDSO14
|
Analog Devices, Inc.
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
