| PART |
Description |
Maker |
| KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory
|
Samsung semiconductor
Samsung Electronic
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K120 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
| AT49F8192 AT49F8192- AT49F8192T-90TI AT49F8192-12R |
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8-Megabit 512K x 16 5-volt Only CMOS Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| 1GW3B2AN6 |
NAND Flash Memory
|
ST Microelectronics
|
| MT29F16G16ADBCA MT29F16G08ADBCA MT29F8G08ABACA |
NAND Flash Memory
|
Micron
|
| KM29W32000AIT KM29W32000AT |
4M x 8-Bit NAND Flash Memory
|
Samsung Semiconductor
|
| MT29F2G16ABBEAH4 MT29F2G08ABBEAHC MT29F2G08ABAEAH4 |
2Gb NAND Flash Memory
|
Micron
|
| K9F6408U0M-TCB0 K9F6408U0M-TIB0 |
8M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM29U64000IT KM29U64000T |
8M x 8 Bit NAND Flash Memory
|
Samsung semiconductor
|
| MT29F32G08CBABA MT29F128G08CJABB MT29F128G08CABA M |
(MT29Fxxxxxxxx) NAND Flash Memory
|
Micron
|
