| PART |
Description |
Maker |
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| 2DI150A120 |
1000 Volts Class Power Transistor Modules
|
Fuji Electric
|
| MTB1N100E_D ON2398 MTB1N100E |
TMOS POWER FET 1.0 AMPERES 1000 VOLTS 1 A, 1000 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| MJW18020 JW18020 MJW18020-D |
NPN Silicon Power Transistors High Voltage Planar 30A 1000 Volts BVces 450 Volts BVceo 250 Watts
|
ONSEMI[ON Semiconductor]
|
| 1N4002GP 1N4005GP 1N4003GP 1N4007GP 1N4001GP 1N400 |
1 Amp Glass PassivatedRectifier 50 - 1000 Volts 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
MCC[Micro Commercial Components]
|
| MTW6N100E-D |
Power MOSFET 6 Amps, 1000 Volts
|
ON Semiconductor
|
| MJF18006 MJE18006 ON2022 |
Switching Power Supply Applications
POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
Motorola, Inc
|
| T9G00410 T9G00412 T9G01010 T9G01012 T9G00110 T9G00 |
Phase Control SCR (1000-1200 Amperes Avg 100-2200 Volts) 第一阶段控制晶闸管（1000-1200安培平均100-2200伏特
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| HER108G-AP HER103G HER107G HER101G |
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 PLASTIC PACKAGE-2
1.0 Amp Glass Passivated High Efficient Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
|
| SFF10N100B |
10 AMP / 1000 Volts 1.2 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| MJE18002D2 ON2018 |
POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
From old datasheet system
|
Motorola, Inc.
ON Semiconductor
|
| 0910-60M |
60 Watts - 40 Volts, 150us, 5% Radar 890 - 1000 MHz
P-Band 890-1000 MHz; P(out) (W): 60; P(in) (W): 9.5; Gain (dB): 8; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 5; Case Style: 55AW-1 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
