PART |
Description |
Maker |
MH16S64APHB-6 MH16S64APHB-7 MH16S64APHB-8 |
1 /073 /741 /824-BIT (16 /777 /216 - WORD BY 64-BIT)Synchronous DRAM 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM 1073741824位(16,777,216 -文字4位)同步DRAM
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MH16S64APHB-8 MH16S64APHB-6 MH16S64APHB-7 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH16S64PHB-6 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
M6MGB166S4BWG M6MGT166S4BWG M6MGB E99008 |
From old datasheet system CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-CSP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
|
Mitsubishi Electric Semiconductor
|
MH16S72PHB-6 B99032 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM From old datasheet system 1 /207 /959 /552-BIT ( 16 /777 /216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH16S72DCFA-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M6MGB_T162S2BVP M6MGB E99005_A M6MGB162S2BVP M6MGT |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HM5116100S-5 |
16,777,216-word x 1-bit Dynamic RAM
|
Hitachi Semiconductor
|
AK5916384GP-60 AK5916384SP-70 |
16,777,216 Word by 9 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|