| PART |
Description |
Maker |
| KMM53232000CK KMM53232000CKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM53232000BK KMM53232000BKG |
32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| M372F3200DJ3-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V 32M × 72配置，带ECC DRAM的内存使6Mx4K
|
Samsung Semiconductor Co., Ltd.
|
| KMM53616000CK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
|
Samsung Semiconductor Co., Ltd.
|
| KMM53616004CK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V 1,600 × 36的DRAM上海药物研究所利用16Mx4
|
Samsung Semiconductor Co., Ltd.
|
| KMM372V3200BS1 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM372V1680BS KMM372V1600BK KMM372V1600BS KMM372V1 |
16M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| H5PS5162GFR-S5L H5PS5162GFR-S5I H5PS5162GFR-S5J H5 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84 7.50 X 12.50 MM, ROHS COMPLIANT, FBGA-84
32M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| N80 K4S511633CNBSP K4S511633C-YL_N80 K4S511633C K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
32Mx16 Mobile SDRAM 54CSP 1/CS 32Mx16移动SDRAM 54CSP 1/CS
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EDX5116ABSE-3B-E EDX5116ABSE-3A-E EDX5116ABSE-3C-E |
512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104
|
Elpida Memory, Inc.
DRAM
|
