| PART |
Description |
Maker |
| USB2227-NE-05 USB2227-NU-10 USB2228-NU-09 USB2227- |
IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PQFP128
|
SMSC Corporation
STANDARD MICROSYSTEMS CORP
|
| SDCFB-10-101 |
4 Mbps, IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, XMA50
|
SANDISK CORP
|
| AM29F032B-75 AM29F032B-90EF |
32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:32Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes 4M X 8 FLASH 5V PROM, 90 ns, PDSO40
|
Spansion, Inc.
|
| EUA5202QIR0 EUA5202QIR1 |
NAND (SLC) Flash Memory System, 16GB Parallel IDE Solid State Disk Drive
NAND (SLC) Flash Memory System, 1GB Parallel IDE Solid State Disk Drive
|
德信科技股份有限公司
|
| UN1231 UN1231A |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:4Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V
Silicon NPN epitaxial planer transistor
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| AM29F040B-120JF AM29F040B-90ED |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512K x 8; Package/Case:32-PLCC; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting Type:Surface Mount RoHS Compliant: Yes 512K X 8 FLASH 5V PROM, 120 ns, PQCC32
Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:512K x 8; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:90ns; Mounting Type:Surface Mount RoHS Compliant: Yes
|
Spansion, Inc.
SPANSION LLC
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| LH28F400BVE-TL85 LHF40V01 |
4MB (512KB x 8/256KB x 16) SmartVoltage Flash Memory(4M512Kx 8/256K位x 16)闪速存储器)
Photoelectric Sensor; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Time Range:1.5 sec. to 15 sec.; Timing Function:On-Delay and Off-Delay 4分快闪记忆体
|
Sharp Corporation
Sharp, Corp.
|
| LH28F400BG-TL85 LH28F400BG-L85 LH28F400BG LH28F400 |
4M-BIT (256 x 16) SmartVoltage Flash Memory
4M-BIT (256KB x16) SmartVoltage Flash MEMORY
4M-BIT(256KBx16) SmartVoltage Flash MEMORY
4M-BIT (256K x 16)Smart Voltage Flash Memory
|
SHARP[Sharp Electrionic Components]
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
| W39V040FA W39V040FAT W39V040FAP W39V040FAQ |
3.3-Volt Flash
NVM > Flash> FWH/LPC Flash Memory
512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE
|
Winbond Electronics
WINBOND[Winbond]
|
