| PART |
Description |
Maker |
| DM2203T-12 DM2203T-15 DM2213T-15 DM2203T-15I DM221 |
Enhanced DRAM (EDRAM) 增强DRAM（eDRAM内存
|
Fluke, Corp.
|
| DM2203TME-15 |
Enhanced DRAM (EDRAM) 增强的DRAM（eDRAM内存
|
BCD Semiconductor Manufacturing, Ltd.
|
| DM2223TME-20 |
Enhanced DRAM (EDRAM) 增强的DRAM（eDRAM内存
|
Fairchild Semiconductor, Corp.
|
| DM2242J2-12L DM2242J2-12I DM2252J2-12L DM2252J2-12 |
Enhanced DRAM (EDRAM) 增强的DRAM（eDRAM内存
|
Linear Technology, Corp.
|
| TS68882VF25 TS68882 TS68882DESC01XA TS68882DESC01Y |
Enhanced 32-bit FPU, 16/20/25-33 MHz
CMOS Enhanced Floating-point Co-processor
|
ATMEL[ATMEL Corporation]
|
| EP7312-CV EP731205 EP7312-CB-90 EP7312-IV-90 EP731 |
High-performance, Low-power, System-on-chip with SDRAM & Enhanced with SDRAM & Enhanced
IC ARM720T MCU 74MHZ 208-LQFP 32-BIT, FLASH, 74 MHz, RISC MICROCONTROLLER, PQFP208
|
Cirrus Logic, Inc.
|
| PIC18FXXXX PIC18LF8722-E_PT PIC18F6627 PIC18F6722 |
(PIC18Fxx2x) Enhanced Flash Microcontrollers
64/80-PIN 1-MBIT ENHANCED FLASH MICROCONTROLLERS WITH 10-BIT A/D AND NANOWATT TECHNOLOGY
|
MICROCHIP[Microchip Technology]
|
| VG2618165CJ-5 |
DRAM Chip, EDO DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|
| AS4LC4M16DG-6S_IT AS4LC4M16DG-6S_XT AS4LC4M16DG-5S |
4 MEG x 16 DRAM Extended Data Out (EDO) DRAM
|
Austin Semiconductor
|
| MT4C4001JCZ-10_883C MT4C4001JCZ-10_IT MT4C4001JCZ- |
1 MEG x 4 DRAM Fast Page Mode DRAM
|
AUSTIN[Austin Semiconductor]
|
| PEB3314 PEB3318 PEB3324 PEB3328 PEB4266 PEB4264 PE |
Enhanced Solutionsfor Next Generation Analog Telephony
(PEB33xx) Voice and Interbet Enhanced Telephony Interface Circuit
|
Infineon Technologies A...
Infineon Technologies AG
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
